WebAug 1, 2024 · InSb is a semiconductor material, which can support surface plasmon waves in the terahertz band and it is desirable to achieve dynamically tunable absorbers. As a typical narrow band gap semiconductor, the carrier concentration of InSb can be flexibly adjusted through the chemical doping or thermal stimuli. WebInSb is a semiconductor material for optoelectronics, infrared detectors, Hall effect sensors, and electric power amplifiers. CdTe is a semiconductor material for infrared …
Fig. 1 Photoluminescence spectra of InAs=InSb=GaSb (10=1=10 …
WebJan 1, 2011 · The recent realization of a crystalline binary semiconductor (InSb) core optical fiber opens the door to new possibilities for nonlinear fiber-based devices. … WebThe active zone of the detector device, grown by molecular beam epitaxy on a p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice... each in sass
Rapid, facile synthesis of InSb twinning superlattice nanowires with …
WebOct 23, 2024 · The binary intermetallic compound InSb was synthesized in 1929 with a zinc blende structure [ 2 ]. But the In-Sb phase diagram was fully explained in 1952 [ 3 ]. Indium Antimonide (InSb) is an III-V group low gap semiconductor, low effective mass (0.014 me), and high electron mobility at RT [ 4, 5 ]. WebInSb is a III-V binary semiconductor material with a bandgap wavelength of 5.4 μm at 77 K, well matched to the 3-5 μm MWIR atmospheric transmission window. When configured as a Focal Plane Array (FPA) detector, InSb photodiodes offer a large quantum efficiency, combined with excellent uniformity and high pixel operability. WebMar 1, 2024 · The InSb 1-x Bi x alloys have face-centered cubic (FCC) structure with F-43 m space group (for x = 0 and 0.25) and P-43 m space group (for x = 0.5, 0.75 and 1). Therefore, these alloys have three independent elastic constants named C11, C12, and C 44, due to their crystal structure symmetry [ 37 ]. each in selection